A silicon-based ion trap chip protected from semiconductor charging

Abstract Silicon-based ion trap chips can benefit from existing advanced fabrication technologies, such as multi-metal layer techniques for two-dimensional architectures and silicon photonics for the integration of on-chip optical components. However, the scalability of these technologies may be compromised by semiconductor charging, where photogenerated charge carriers produce electric potentials that disrupt ion motion. Inspired by recent studies on charge distribution mechanisms in semiconductors, we developed a silicon-based chip with gold coated on all exposed silicon surfaces. This modification significantly stabilized ion motion compared to a chip without such metallic shielding, a result that underscores the detrimental effects of exposed silicon. With the mitigation of background silicon-induced fields to negligible levels, quantum operations such as sideband cooling and two-ion entangling gates, which were previously infeasible with the unshielded chip, can now be implemented.

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Publication Details

Journal
Quantum Science and Technology
Published
2025-04-24
DOI
https://doi.org/10.1088/2058-9565/add04c
Citations
3
Primary Topic
Integrated Circuits and Semiconductor Failure Analysis
Type
article
Field-Weighted Citation Impact
2.19

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article

A silicon-based ion trap chip protected from semiconductor charging

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Quantum Science and Technology
Integrated Circuits and Semiconductor Failure Analysis
2.19
article

A silicon-based ion trap chip protected from semiconductor charging

Jiyong Kang, Kyunghye Kim, Beomgeun Cho, Hosung Shon, Chiyoon Kim, Dong‐il Cho, Roberts Berkis, Kwangyeul Choi, Don W. Chung, Changhyun Jung, Seung-Woo Yoo, Jeonghyun Park, Kyungmin Lee, Tracy E. Northup, Taehyun Kim, Woojun Lee, U. Jeong, Suhan Kim
article en
3 citations

Abstract

Abstract Silicon-based ion trap chips can benefit from existing advanced fabrication technologies, such as multi-metal layer techniques for two-dimensional architectures and silicon photonics for the integration of on-chip optical components. However, the scalability of these technologies may be compromised by semiconductor charging, where photogenerated charge carriers produce electric potentials that disrupt ion motion. Inspired by recent studies on charge distribution mechanisms in semiconductors, we developed a silicon-based chip with gold coated on all exposed silicon surfaces. This modification significantly stabilized ion motion compared to a chip without such metallic shielding, a result that underscores the detrimental effects of exposed silicon. With the mitigation of background silicon-induced fields to negligible levels, quantum operations such as sideband cooling and two-ion entangling gates, which were previously infeasible with the unshielded chip, can now be implemented.

Quantum Science and TechnologyVol. 10(3)
Seoul National University (KR), Universität Innsbruck (AT), Systems Research Institute (PL)
Austrian Science Fund, National Research Foundation of Korea, Institute for Information and Communications Technology Promotion
Openalex Percentile: Top 13%
Integrated Circuits and Semiconductor Failure Analysis
2.19
DOIOpen Access PDFOpenAlex
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