Capacitance-voltage characteristics and electrostatic field distribution in CdTe/Si heterojunctions: temperature dependence and theoretical modeling

Abstract This study investigates the temperature-dependent capacitance–voltage (C-V) characteristics and electrostatic field distribution in cadmium telluride/silicon (CdTe/Si) heterojunctions to optimize their performance for solar and semiconductor applications. CdTe is widely recognized for its excellent light absorption and high carrier mobility, whereas silicon is well established in the semiconductor industry, making CdTe/Si heterojunctions highly suitable for enhanced photovoltaic and optoelectronic devices. By applying theoretical modeling this study examines how temperature variations ranging from 250 K to 400 K impact critical parameters such as space charge density, electric field distribution, and depletion width within the heterojunction. Key findings reveal that temperature influences both the capacitance and the electric field intensity across the junction, with elevated temperatures enhancing carrier recombination and reducing the depletion width, which in turn increases the capacitance. The electric field distribution shows a distinct peak at the interface, growing in intensity with increasing temperature, suggesting enhanced carrier separation and possible efficiency gains in photovoltaic applications. However, high temperatures may induce instability owing to excessive electric field intensity. This study provides a comprehensive understanding of CdTe/Si heterojunction behavior under varying thermal conditions, offering valuable insights for designing thermally resilient and efficient optoelectronic devices.