IR resist patterning by maskless exposure for high-performance applications

The Maskless Exposure (MLE) Technology, previously demonstrated for RGB resists, is now applied to novel IR resists for high-performance SWIR camera applications. MLE performance utilizing a new exposure methodology with focus on critical dimension uniformity and compensation for substrate distortions exposure is demonstrated, enabling precise and stich–less full–wafer structuring. Dynamically exposure–time–generated data–matrix and static QR-codes are shown down to the systems resolution limit to demonstrate successful digital adaptations during exposure time. The novel IR–resists exhibit high resolution and low reflectance, making them ideal for their integration in advanced imaging applications. The novelty of the technology was proven by the optimization of specialized software features, which were designed to overcome the challenges associated with the lithographic patterning in high–performance applications.