Nanoscrolled Monolayer MoS₂ with High Field-Effect Mobility and Enhanced Photoluminescence Quantum Yield: Implications for Nanoscale Optoelectronic Applications

We fabricated one-dimensional (1D) nanoscrolled monolayer MoS2 (1L-MoS2) with superior characteristics from a 1L-MoS2 film via a facile route using a suitable organic solvent with optimum surface tension, evaporation rate, and dielectric constant to facilitate controlled scroll formation. These nanoscrolls exhibit multilayer morphology while retaining monolayer electronic properties. The nanoscrolls exhibit a direct optical gap and enhanced photoluminescence (PL) quantum yield (QY) stemming from the weak interlayer coupling among constituent layers and are corroborated by low-frequency (LF) Raman and Kelvin probe force microscopy (KPFM) measurements. Furthermore, enhanced photoluminescence emission after annealing uncovers the thermal stability of nanoscrolls. In addition, conducting atomic force microscopy (C-AFM) results demonstrate a significantly higher photocurrent in nanoscrolled 1L-MoS2 compared to 1L-MoS2. Additionally, we also realized significantly improved field-effect transistor device (FET) parameters in nanoscrolled 1L-MoS2 devices. In nanoscrolled FET devices, we report the highest mobility value of 2400 cm2 V–1 s–1 reported in any 1L-MoS2 system. The reported results highlight the potential of nanoscrolled 1L-MoS2 for advancing electronic and optoelectronic applications at the nanoscale.