Nonvolatile bistable planar Hall effects in a natural two-dimensional metal–antiferromagnet heterostructure

Antiferromagnetic materials with van der Waals (vdW) layered structures hold great promises for developing the next generation of electronic and optoelectronic devices, providing unique combinations of terahertz spin dynamics, ultrastability against magnetic fields disturbance, and low power consumption. Here, we demonstrate unconventional nonvolatile bistable planar Hall effect (PHE) in few-layer ${\mathrm{GdTe}}_{3}$, a natural vdW heterostructure consisting of metallic Te layers and antiferromagnetic (AFM) GdTe bilayers. By fully unfolding the magnetic phase diagram of few-layer ${\mathrm{GdTe}}_{3}$ utilizing temperature- and angle-dependent magnetotransport measurements, we identify that the nonvolatile switching of bistable PHE states is rooted in the fourfold N\'eel vector flipping between two perpendicular in-plane magnetocrystalline anisotropy axes, each flipping reverses the signs of the PHE state. The efficient magnetic field ($H$) write-in and zero-field read out of the PHE memory pave the way for 2D AFM-based spintronics such as nonvolatile information storage and logic operations.

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Publication Details

Journal
Physical review. B./Physical review. B
Published
2025-04-23
DOI
https://doi.org/10.1103/physrevb.111.155437
Primary Topic
Magnetic properties of thin films
Type
article
Field-Weighted Citation Impact
0.00

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article

Nonvolatile bistable planar Hall effects in a natural two-dimensional metal–antiferromagnet heterostructure

Hui Xing, Guang‐Han Cao, Xinxi Liu, Yunhao Lu et al.
Physical review. B./Physical review. B
Magnetic properties of thin films
article

Nonvolatile bistable planar Hall effects in a natural two-dimensional metal–antiferromagnet heterostructure

Hui Xing, Guang‐Han Cao, Xinxi Liu, Yunhao Lu, Dawei Shen, Takashi Taniguchi, Jiayi Lu, Kenji Watanabe, Yuqiang Huang, Yi Zheng, Bin Lu, Min‐Jie Zhang, Qifeng Hu
article en

Abstract

Antiferromagnetic materials with van der Waals (vdW) layered structures hold great promises for developing the next generation of electronic and optoelectronic devices, providing unique combinations of terahertz spin dynamics, ultrastability against magnetic fields disturbance, and low power consumption. Here, we demonstrate unconventional nonvolatile bistable planar Hall effect (PHE) in few-layer ${\mathrm{GdTe}}_{3}$, a natural vdW heterostructure consisting of metallic Te layers and antiferromagnetic (AFM) GdTe bilayers. By fully unfolding the magnetic phase diagram of few-layer ${\mathrm{GdTe}}_{3}$ utilizing temperature- and angle-dependent magnetotransport measurements, we identify that the nonvolatile switching of bistable PHE states is rooted in the fourfold N\'eel vector flipping between two perpendicular in-plane magnetocrystalline anisotropy axes, each flipping reverses the signs of the PHE state. The efficient magnetic field ($H$) write-in and zero-field read out of the PHE memory pave the way for 2D AFM-based spintronics such as nonvolatile information storage and logic operations.

Physical review. B./Physical review. BVol. 111(15)
Shanghai Jiao Tong University (CN), National Institute for Materials Science (JP), National Synchrotron Radiation Laboratory (CN), Zhejiang University (CN)
Ministry of Science and Technology, Chinese Academy of Sciences, Ministry of Science and Technology of the People's Republic of China, National Key Research and Development Program of China, Natural Science Foundation of Zhejiang Province
Openalex Percentile: Top 93%
Magnetic properties of thin films
DOISourceOpenAlex
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