Low leakage and high blocking voltage GaN-on-GaN Schottky diode by TMAH surface treatment

In this study, the impact of surface treatment by TMAH and HF on the electrical characteristics of GaN-on-GaN Schottky diodes is examined through I–V and C–V characterizations. A TMAH surface treatment leads to an improvement in the reverse characteristics of the devices and improvement in breakdown voltage (BV) by almost 200 V compared to HF treatment. Additional XPS characterizations reveal a reduction in both O and C concentration from the surface due to TMAH treatment. When combined with proper edge termination techniques, this approach can help achieve breakdown voltages that are closer to the theoretical limits. • TMAH+HF & HF based surface treatments compared electrically and by XPS. • An increase in BV (>200 V) & significant reduction in leakage current with TMAH+HF. • An enhanced barrier height is also observed for TMAH+HF treated sample.

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Publication Details

Journal
Power Electronic Devices and Components
Published
2025-04-23
DOI
https://doi.org/10.1016/j.pedc.2025.100092
Primary Topic
GaN-based semiconductor devices and materials
Type
article
Field-Weighted Citation Impact
0.00

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Low leakage and high blocking voltage GaN-on-GaN Schottky diode by TMAH surface treatment

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Low leakage and high blocking voltage GaN-on-GaN Schottky diode by TMAH surface treatment

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article en

Abstract

In this study, the impact of surface treatment by TMAH and HF on the electrical characteristics of GaN-on-GaN Schottky diodes is examined through I–V and C–V characterizations. A TMAH surface treatment leads to an improvement in the reverse characteristics of the devices and improvement in breakdown voltage (BV) by almost 200 V compared to HF treatment. Additional XPS characterizations reveal a reduction in both O and C concentration from the surface due to TMAH treatment. When combined with proper edge termination techniques, this approach can help achieve breakdown voltages that are closer to the theoretical limits. • TMAH+HF & HF based surface treatments compared electrically and by XPS. • An increase in BV (>200 V) & significant reduction in leakage current with TMAH+HF. • An enhanced barrier height is also observed for TMAH+HF treated sample.

Power Electronic Devices and ComponentsVol. 11
Université de Tours (FR), Centre National de la Recherche Scientifique (FR), Commissariat à l'Énergie Atomique et aux Énergies Alternatives (FR), Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications (FR), Services déconcentrés d'appui à la recherche Val de Loire (FR), Institut National des Sciences Appliquées Centre Val de Loire (FR), Laboratoire d'Électronique des Technologies de l'Information (FR), Université Grenoble Alpes (FR)
Agence Nationale de la Recherche, LabEx GANEX, Electronic Components and Systems for European Leadership
Clean water and sanitation, Affordable and clean energy
Openalex Percentile: Top 95%
GaN-based semiconductor devices and materials
DOIOpen Access PDFOpenAlex
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