SiC MOSFET Parameter Tolerance – A Comparison Between 5 Manufacturers

SiC MOSFETs have a higher parameter tolerance than Silicon devices. This has implications for the design of real-world power electronic converters, particularly with the use of paralleled devices where derating must be applied to ensure all chips remain under the maximum operating temperature. In this paper, we compare 1200V SiC MOSFETs from 5 different manufacturers. All devices are single-chip and packaged in a discrete TO-247 case. The On-Resistance, Threshold Voltage, and Body-Diode forward voltage are measured on 120 devices from each manufacturer (a total of 600 measured devices) and presented in this paper.