Recent Advances of AgBiS₂: Synthesis Methods, Photovoltaic Device, Photodetector, and Sensors

Recent years have seen increased interest in optoelectronic semiconductor materials, particularly those from groups II-VI, IV-VI, and perovskite, due to their outstanding electronic and optical properties. However, the toxicity and environmental concerns related to heavy metals like lead and cadmium have hindered their widespread commercial use, shifting the focus to AgBiS<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> a nontoxic, cost-effective, and promising alternative. Despite significant progress, the efficiency of AgBiS<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> remains lower than that of perovskite or cadmium-lead-based devices, primarily due to challenges in nanocrystals (NCs) synthesis and limitations in device structure and stability when using AgBiS2 thin films. This review evaluates these challenges by examining the synthesis process, addressing device-related limitations, and discussing recent advancements in AgBiS2 research and its potential applications. It includes an analysis of AgBiS<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf>'s chemical and crystal structures, as well as its optoelectronic properties. Additionally, we review improvements in synthesizing high-quality AgBiS<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> NCs and discuss applications such as photo detectors and X-ray/photoelectro-chemical sensors. Finally, we highlight the challenges and future prospects for AgBiS<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> offering insights into its potential for various applications.