Novel Integrated Ferromagnetic-Conductor (IFC) Multilayered Shield Layer for Parasitic Reduction in Power Modules

Modern power modules increase power density of converters by incorporating Wide Bandgap (WBG) semiconductor devices, which minimize switching losses during rapid transients. However, WBG devices are susceptible to power loop parasitics that can lead to voltage overshoot and electromagnetic interference (EMI). This study presents a novel packaging technique using Power Module Integrated Ferromagnetic-Conductor (IFC)-based multilayer shields to reduce parasitic loop inductance, providing better near field emissions protection than traditional conductor shields. Results show that a 0.3 oz Nickel ferromagnetic shield on Copper reduces loop inductance by approximately 2%, 6.8%, and 4.3% for 40, 120, and 300 μm thick dielectrics at 100 kHz, respectively. Additionally, reductions in magnetic flux density reached about 64% for 40 μm and 76% for 300 μm at 10 kHz, and 60% for 40 μm and 54% for 300 μm at 400 kHz.