High-Density Integrated GaN Hybrid Power Module Design with Double-Sided Cooling

Lateral gallium nitride (GaN) high-electronmobility transistors (HEMTs) offer notable advantages over traditional silicon (Si) and silicon carbide (SiC) devices, including faster switching speeds and lower gate charge. However, these benefits introduce significant challenges in power module packaging, particularly in thermal management and parasitic inductance reduction. While research has focused on developing high-density GaN power modules with on-package decoupling capacitors and integrated gate drivers to mitigate parasitic effects, this work proposes a hybrid PCB-on-Active Metal Brazing (AMB) configuration to enhance integration and double-sided cooling (DSC). To validate the proposed design, a prototype half-bridge GaN power module with compact dimensions of 30 mm × 18 mm has been fabricated and tested. The results demonstrate a low power-loop inductance of 1.2 nH, with an overshoot voltage of approximately 7% during a 400-V/25-A double-pulse test, while thermal evaluation indicates a thermal resistance of 0.31 K/W, highlighting the effectiveness of the proposed packaging strategy in both electrical and thermal performance.