Design, Fabrication, and Operation Challenges of Advanced Power Packaging Technology for EV Power Modules

Double-sided cooled (DSC) power modules enable high power density for medium-voltage converter applications. Incorporating Wide Bandgap (WBG) devices, these modules reduce switching losses by effectively handling rapid switching transients. This work discusses the design, fabrication and operation challenges of a 400 V / 61 A Gallium Nitride High Electron Mobility Transistors (GaN HEMT) DSC epoxy resin Insulated Metal Substrate (eIMS) based power module, which integrates GaN devices, gate drivers, power decoupling, and gate bypass capacitors into a power-dense package. The discussion includes the electro-thermo-mechanical design steps, emphasizing achieving low parasitic inductances of 0.15 nH for the gate and 1.18 nH for the power loop and a high transient edge capability of 8.3 ns. The study also addresses the thermo-mechanical stress distribution reliability of the package, with different substrate dielectric materials, and verifies power cycling performance.