Vertical Channel-All-Around (CAA) IGZO FET With Recessed Source/Drain Structure to Improve Contact Characteristics
We proposed recessed source/drain(S/D) structure for vertical channel-all-around (CAA) IGZO FET to introduce contact interlayer and improve its contact characteristics. The IZO interlayer introduced between S/D and IGZO helps to reduce the contact resistance, and boosting the performance of CAA IGZO FET. The fabricated CAA IGZO FETs with 8 nm IZO interlayer show an average I<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">on</sub> @ V<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">th</sub>+1V of 32.6 μA/μm, SS of 86 mV/dec, and V<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">th</sub> of - 0.06 V. The Schottky barrier height qϕB is extracted to be reduced from 170 meV to 65 meV by introducing the contact interlayer, which confirms the improvement of contact characteristics.
Authors
- Xinlv Duan (ORCID: https://orcid.org/0000-0001-5183-7060)
- Ke Hu (ORCID: https://orcid.org/0000-0002-1084-697X)
- Congyan Lu (ORCID: https://orcid.org/0000-0002-4064-7410)
- Shipeng Wang (ORCID: https://orcid.org/0000-0002-2028-4253)
- Chuanke Chen (ORCID: https://orcid.org/0009-0001-0477-2927)
- Weiwei Li (ORCID: https://orcid.org/0009-0001-0636-7781)
- Qiaoling Tong (ORCID: https://orcid.org/0000-0002-9888-0426)
- Wanming Wu (ORCID: https://orcid.org/0009-0009-4005-4752)
- Di Geng (ORCID: https://orcid.org/0000-0002-5653-6811)
- Yu Liu (ORCID: https://orcid.org/0000-0002-6752-957X)
- Ling Li (ORCID: https://orcid.org/0000-0002-7622-8752)
- Chunyu Zhang (ORCID: https://orcid.org/0009-0001-4302-039X)
- Chen Gu (ORCID: https://orcid.org/0009-0001-4151-3537)
- Kaiping Zhang
- Shengjie Zhao (ORCID: https://orcid.org/0000-0002-1908-1133)
- Yanjun Tang (ORCID: https://orcid.org/0000-0002-3882-5935)
- Nianduan Lu (ORCID: https://orcid.org/0000-0001-8415-7627)
- Yue Zhao (ORCID: https://orcid.org/0009-0000-7648-429X)
- Jiebin Niu (ORCID: https://orcid.org/0009-0009-6299-0947)
Institutions
- Chinese Academy of Sciences (CN)
- Institute of Microelectronics (CN)
Publication Details
- Journal
- IEEE Electron Device Letters
- Published
- 2025-04-23
- DOI
- https://doi.org/10.1109/led.2025.3563839
- Citations
- 7
- Primary Topic
- Advancements in Semiconductor Devices and Circuit Design
- Type
- article
- Field-Weighted Citation Impact
- 5.11
Funders
- National Natural Science Foundation of China