Giant switchable ferroelectric photovoltage in double-perovskite epitaxial films through chemical negative strain

Double-perovskite films have been extensively studied in multifunctional fields due to their modifiability. Here, a controlled process strategy to induce chemical strain and anomalous Poisson deformation is proposed for perovskite-based films. The chemical negative strain in the local-ordering BiSmFe<sub>2</sub>O<sub>6</sub> double-perovskite films can be regulated by oxygen engineering to cause the effectively tunable bandgap. We markedly increased the switchable open-circuit voltage to ~1.56 V from ~0.50 V for Pt/BiSmFe<sub>2</sub>O<sub>6</sub>/Nb-SrTiO<sub>3</sub> devices, which is the highest in single-layer perovskite-based ferroelectric photovoltaic perpendicular devices under white light-emitting diode irradiation. The multifield composite action mechanism reveals the electrical cause of the large open-circuit voltage. The synergy of the optical fields and ferroelectric fields provides the possibility of multilevel storage. Structural characterizations indicate that the chemical strain offers a dual role of lattice distortion and vacancy migration. The strategy of controllable chemical strain facilitates further exploration of the application potential of ferroelectric materials for multifunctional electronic devices.

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Publication Details

Journal
Science Advances
Published
2025-04-23
DOI
https://doi.org/10.1126/sciadv.ads4925
Citations
13
Primary Topic
Perovskite Materials and Applications
Type
article
Field-Weighted Citation Impact
9.50
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article

Giant switchable ferroelectric photovoltage in double-perovskite epitaxial films through chemical negative strain

Yue‐Wen Fang, Jing Xia, Yueyang Jia, Linxing Zhang et al.
13 citations
Science Advances
Perovskite Materials and Applications
9.50
article

Giant switchable ferroelectric photovoltage in double-perovskite epitaxial films through chemical negative strain

Yue‐Wen Fang, Jing Xia, Yueyang Jia, Linxing Zhang, Rui Yang, Hangren Li, Xudong Liu, Guoqiang Xi, Jiaqi Ding, Xiangmin Meng, X. G. Liu, Siyuan Du, Jianjun Tian, Xiaolong Li, Dong-Fei Lu, Jie Tu, Mengqi Zhang, Xianran Xing, Rong Wu, Yuzhuo Liu, Yuan Meng, Longyuan Shi
article en
13 citations

Abstract

Double-perovskite films have been extensively studied in multifunctional fields due to their modifiability. Here, a controlled process strategy to induce chemical strain and anomalous Poisson deformation is proposed for perovskite-based films. The chemical negative strain in the local-ordering BiSmFe<sub>2</sub>O<sub>6</sub> double-perovskite films can be regulated by oxygen engineering to cause the effectively tunable bandgap. We markedly increased the switchable open-circuit voltage to ~1.56 V from ~0.50 V for Pt/BiSmFe<sub>2</sub>O<sub>6</sub>/Nb-SrTiO<sub>3</sub> devices, which is the highest in single-layer perovskite-based ferroelectric photovoltaic perpendicular devices under white light-emitting diode irradiation. The multifield composite action mechanism reveals the electrical cause of the large open-circuit voltage. The synergy of the optical fields and ferroelectric fields provides the possibility of multilevel storage. Structural characterizations indicate that the chemical strain offers a dual role of lattice distortion and vacancy migration. The strategy of controllable chemical strain facilitates further exploration of the application potential of ferroelectric materials for multifunctional electronic devices.

Science AdvancesVol. 11(17)
Hunan University (CN), Shanghai Jiao Tong University (CN), Chinese Academy of Sciences (CN), Shanghai Advanced Research Institute (CN), Material Physics Center (ES), Technical Institute of Physics and Chemistry (CN), Donostia International Physics Center (ES), University of Science and Technology Beijing (CN)
Affordable and clean energy
Openalex Percentile: Top 2%
Perovskite Materials and Applications
9.50
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