Sub-pA dark current infrared photodetection enabled by polarized water-intercalated heterojunctions

Barrier detectors such as nBn and pBp architectures (formed by a n- or p-type contact layer, a barrier layer and a n- or p-type absorber) aim to block one carrier type while allowing the other to pass, but require complex hetero-integration and precise band engineering. Here, we propose an ultra-thin polar barrier strategy using a 0.75 nm water-intercalated WSe<sub>2</sub>/H<sub>2</sub>O/PdSe<sub>2</sub> heterostructure. The confined water layer forms a clean, well-ordered interface and further generates a precisely oriented polarization field that depletes electrons in WSe<sub>2</sub>, significantly suppressing dark current to sub-pA levels across all biases, while enabling efficient tunneling of photogenerated holes. The device shows broadband photoresponse from the ultraviolet to mid-wave infrared (MWIR), with a room-temperature average detectivity exceeding 10¹⁰ cm Hz¹<sup>/</sup>² W⁻¹ in the MWIR. It also features ultrafast response (~3 μs), polarization light sensitivity, and two-year stability. Our work establishes a platform for high-performance infrared photodetection via van der Waals gap engineering.

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Publication Details

Journal
Nature Communications
Published
2025-04-23
DOI
https://doi.org/10.1038/s41467-025-59211-5
Citations
9
Primary Topic
Advanced Semiconductor Detectors and Materials
Type
article
Field-Weighted Citation Impact
6.57

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article

Sub-pA dark current infrared photodetection enabled by polarized water-intercalated heterojunctions

Shuimei Ding, Chao Ma, Xingqiang Liu, Yawei Lv et al.
9 citations
Nature Communications
Advanced Semiconductor Detectors and Materials
6.57
article

Sub-pA dark current infrared photodetection enabled by polarized water-intercalated heterojunctions

Shuimei Ding, Chao Ma, Xingqiang Liu, Yawei Lv, Lei Liao, Long Chen, Xuming Zou, Enge Wang, Fang Wang, Xin Zhang, Xudong Wang, Chang Liu, Sen Zhang, Yuan Liu, Peng Wang, Lin Tang, Yilu Qin, Xu Pan, Shihao Zhao
article en
9 citations

Abstract

Barrier detectors such as nBn and pBp architectures (formed by a n- or p-type contact layer, a barrier layer and a n- or p-type absorber) aim to block one carrier type while allowing the other to pass, but require complex hetero-integration and precise band engineering. Here, we propose an ultra-thin polar barrier strategy using a 0.75 nm water-intercalated WSe<sub>2</sub>/H<sub>2</sub>O/PdSe<sub>2</sub> heterostructure. The confined water layer forms a clean, well-ordered interface and further generates a precisely oriented polarization field that depletes electrons in WSe<sub>2</sub>, significantly suppressing dark current to sub-pA levels across all biases, while enabling efficient tunneling of photogenerated holes. The device shows broadband photoresponse from the ultraviolet to mid-wave infrared (MWIR), with a room-temperature average detectivity exceeding 10¹⁰ cm Hz¹<sup>/</sup>² W⁻¹ in the MWIR. It also features ultrafast response (~3 μs), polarization light sensitivity, and two-year stability. Our work establishes a platform for high-performance infrared photodetection via van der Waals gap engineering.

Nature CommunicationsVol. 16(1)
Hunan University (CN), Peking University (CN), Shanghai Institute of Technical Physics (CN)
China National Funds for Distinguished Young Scientists, National Key Research and Development Program of China
Clean water and sanitation
Openalex Percentile: Top 3%
Advanced Semiconductor Detectors and Materials
6.57
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