Sensitized Near-Infrared Emission of SiGe Nanocrystals via Heterostructuring with Quasi Two-Dimensional Perovskite

The near-infrared (NIR) emission of silicon-germanium alloy nanocrystals (SiGe NCs) was sensitized by heterostructuring with a quasi two-dimensional (Q-2D) perovskite (CsPbBr<sub>3</sub> blended with butylammonium bromide (BABr)). Colloidal SiGe NCs were synthesized by using a nonthermal plasma method with chloride precursors. As-synthesized SiGe NCs showed no detectable photoluminescence (PL). Embedding the SiGe NCs within the perovskite matrix via spin coating led to a heterostructure exhibiting dual emissions: green emission at 520 nm from the perovskite and NIR emission at 1035 nm from the SiGe NCs. Time-integrated and resolved PL measurements and transient absorption spectroscopy revealed energy transfer from the perovskite to the SiGe NCs, which sensitized the NIR emission from the SiGe NCs and quenched the green PL for the perovskite. These results demonstrate that Ge alloying can effectively tune the bandgap of Si NCs and highlight the feasibility of heterostructuring perovskites and photoluminescent NCs to enhance or activate their PL. This approach broadens their potential applications in the NIR region.

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Publication Details

Journal
ACS Applied Materials & Interfaces
Published
2025-04-23
DOI
https://doi.org/10.1021/acsami.5c00173
Primary Topic
Silicon Nanostructures and Photoluminescence
Type
article
Field-Weighted Citation Impact
0.00

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article

Sensitized Near-Infrared Emission of SiGe Nanocrystals via Heterostructuring with Quasi Two-Dimensional Perovskite

Benjamin K. Derby, Jinkyoung Yoo, Sundar Kunwar, Doyun Kim et al.
ACS Applied Materials & Interfaces
Silicon Nanostructures and Photoluminescence
article

Sensitized Near-Infrared Emission of SiGe Nanocrystals via Heterostructuring with Quasi Two-Dimensional Perovskite

Benjamin K. Derby, Jinkyoung Yoo, Sundar Kunwar, Doyun Kim, Uwe Kortshagen, Yeonjoo Lee, Eric G. Bowes, Mircea Cotlet, Wanyi Nie, John Watt
article en

Abstract

The near-infrared (NIR) emission of silicon-germanium alloy nanocrystals (SiGe NCs) was sensitized by heterostructuring with a quasi two-dimensional (Q-2D) perovskite (CsPbBr<sub>3</sub> blended with butylammonium bromide (BABr)). Colloidal SiGe NCs were synthesized by using a nonthermal plasma method with chloride precursors. As-synthesized SiGe NCs showed no detectable photoluminescence (PL). Embedding the SiGe NCs within the perovskite matrix via spin coating led to a heterostructure exhibiting dual emissions: green emission at 520 nm from the perovskite and NIR emission at 1035 nm from the SiGe NCs. Time-integrated and resolved PL measurements and transient absorption spectroscopy revealed energy transfer from the perovskite to the SiGe NCs, which sensitized the NIR emission from the SiGe NCs and quenched the green PL for the perovskite. These results demonstrate that Ge alloying can effectively tune the bandgap of Si NCs and highlight the feasibility of heterostructuring perovskites and photoluminescent NCs to enhance or activate their PL. This approach broadens their potential applications in the NIR region.

ACS Applied Materials & InterfacesVol. 17(18)
Los Alamos National Laboratory (US), Brookhaven National Laboratory (US), University of Minnesota System (US), Mitchell Institute (US), Center for Integrated Nanotechnologies (US), Center for Functional Nanomaterials, University at Buffalo, State University of New York (US), Texas A&M University (US)
Research Foundation for the State University of New York, University at Buffalo, Laboratory Directed Research and Development, Army Research Office
Openalex Percentile: Top 94%
Silicon Nanostructures and Photoluminescence
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