Homoepitaxial growth of thick Si-doped <i>β</i>-Ga<sub>2</sub>O<sub>3</sub> layers using tetramethylsilane as a dopant source by low-pressure hot-wall metalorganic vapor phase epitaxy
Abstract By using tetramethylsilane (TMSi) as a Si dopant source, thick intentionally Si-doped β -Ga 2 O 3 homoepitaxial layers were grown by low-pressure hot-wall metalorganic vapor phase epitaxy. The Si concentration was linearly controlled by varying the TMSi supply, and a RT electron density nearly equal to the Si concentration was achieved in the range from 1.8 × 10 16 to 1.3 × 10 19 cm –3 . For the layer with a Si concentration and RT electron density of 1.8 × 10 16 cm –3 , the RT electron mobility of 136 cm 2 V –1 s –1 was found to be limited by polar optical phonon scattering.
Authors
- Kazutada Ikenaga (ORCID: https://orcid.org/0000-0002-0755-5872)
- Y. Ban
- Yoshiki Iba
- Masataka Higashiwaki (ORCID: https://orcid.org/0000-0003-2821-3107)
- Shuichi Koseki
- Takahito Okuyama
- Junya Yoshinaga (ORCID: https://orcid.org/0009-0002-5892-0419)
- Yoshinao Kumagai (ORCID: https://orcid.org/0000-0001-8475-9468)
- Takeyoshi Onuma (ORCID: https://orcid.org/0000-0003-0060-4245)
- K. Shiina
- Yasuo Terauchi (ORCID: https://orcid.org/0000-0002-8872-3697)
- Shogo Sasaki
- K. Kubota
Institutions
- Kogakuin University (JP)
- Taisei (Japan) (JP)
- NOF Corporation (Japan) (JP)
- Osaka Metropolitan University (JP)
- Tokyo University of Agriculture and Technology (JP)
- Nara Women's University (JP)
Publication Details
- Journal
- Applied Physics Express
- Published
- 2025-04-23
- DOI
- https://doi.org/10.35848/1882-0786/adcfee
- Citations
- 6
- Primary Topic
- Ga2O3 and related materials
- Type
- article
- Field-Weighted Citation Impact
- 2.56