Analytical Solution to the Gradual Channel Approximation
The problem of the potential distribution in a field effect transistor within the gradual channel approximation is revisited, which is also known as Shockley's model. The hitherto not reported analytical solution for the drop of the source–drain voltage along the channel is presented.
Authors
- Marius Grundmann (ORCID: https://orcid.org/0000-0001-7554-182X)
Institutions
- Leipzig University (DE)
Publication Details
- Journal
- physica status solidi (b)
- Published
- 2025-04-22
- DOI
- https://doi.org/10.1002/pssb.202500071
- Citations
- 1
- Primary Topic
- Silicon and Solar Cell Technologies
- Type
- article
- Field-Weighted Citation Impact
- 0.73