Enhanced Backgate Tunability on Interfacial Carrier Concentration in Ionic Liquid‐Gated MoS <sub>2</sub> Devices

The periodic spatial modulation potential arising from the zig-zag distribution of ions at large gate voltage in an ionic liquid-gated device may enable functionalities in a similar way as nanopatterning and moiré engineering. However, the inherent coupling between periodic modulation potential and carrier concentration in ionic liquid devices has hindered further exploration. Here, the feasibility of decoupling manipulation on periodic modulation potential and carrier density in an ionic liquid device is demonstrated by using a conventional backgate. The backgate is found to have a tunability on carrier concentration comparable to that of ionic gating, especially at large ionic liquid gate voltage, by activating the bulk channels mediated back tunneling between the trapped bands and interfacial channel.

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Publication Details

Journal
Small
Published
2025-04-22
DOI
https://doi.org/10.1002/smll.202501428
Primary Topic
Electronic and Structural Properties of Oxides
Type
article
Field-Weighted Citation Impact
0.00

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article

Enhanced Backgate Tunability on Interfacial Carrier Concentration in Ionic Liquid‐Gated MoS 2 Devices

Qiyang Song, Changshuai Lan, Shun Wang, Chengyu Yan et al.
Small
Electronic and Structural Properties of Oxides
article

Enhanced Backgate Tunability on Interfacial Carrier Concentration in Ionic Liquid‐Gated MoS 2 Devices

Qiyang Song, Changshuai Lan, Shun Wang, Chengyu Yan, Yi Yan, Qiao Chen
article en

Abstract

The periodic spatial modulation potential arising from the zig-zag distribution of ions at large gate voltage in an ionic liquid-gated device may enable functionalities in a similar way as nanopatterning and moiré engineering. However, the inherent coupling between periodic modulation potential and carrier concentration in ionic liquid devices has hindered further exploration. Here, the feasibility of decoupling manipulation on periodic modulation potential and carrier density in an ionic liquid device is demonstrated by using a conventional backgate. The backgate is found to have a tunability on carrier concentration comparable to that of ionic gating, especially at large ionic liquid gate voltage, by activating the bulk channels mediated back tunneling between the trapped bands and interfacial channel.

SmallVol. 21(24)
Huazhong University of Science and Technology (CN)
National Natural Science Foundation of China
Openalex Percentile: Top 94%
Electronic and Structural Properties of Oxides
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