2D/Organic Photovoltage Field‐Effect Transistors

Abstract Detectors typically face a trade‐off between achieving high responsivity and high‐speed performance. Balancing these characteristics remains a challenge. Developing broadband infrared detection that achieves high responsivity while maintaining high‐speed operation at room temperature is a key objective for the next generation of infrared sensing technologies. In this work, a novel 2D/organic hybrid photogating field‐effect transistor (PVFET) capable of broadband detection spanning 488–1550 nm is reported. This device simultaneously enhances both gain and response speed, achieving a remarkable gain‐bandwidth product of 1.18 × 10 10 , thereby overcoming the conventional trade‐off between responsivity and speed. Through comprehensive analysis of the device's physical dynamics, the correlation between PVFET performance, incident wavelength, and device Fermi level is demonstrated. Notably, this device operates at an exceptionally low power consumption of 0.25 µW cm 2 . Building on these superior characteristics, it is further showcase the potential of this PVFET in communication applications. The proposed 2D/organic PVFET provides a promising reference for the development of next‐generation high‐speed, high‐sensitivity photodetectors.