Investigation of the Etching Resistance of Yttrium Oxyfluoride Coating Deposited via Atmospheric Plasma Spraying Against Cl2/O2 Plasma

Chlorine-based plasma is widely used in key etching applications. However, while etching the wafer materials, chlorine plasma can cause damage to the internal components of the etching chamber, which adversely affects the equipment's lifespan. As a result, selecting appropriate coating materials for the chamber's internal components is essential for mitigating corrosion. The etch resistance of these coatings directly impacts not only the quality of wafer production but also the operational safety and maintenance cycle of the etching equipment. In this study, three yttrium oxyfluoride coatings with different oxygen contents (3%, 6%, and 9%) were prepared using atmospheric plasma spraying technology. The etch resistance of these YOF coatings, as well as yttrium oxide coating, was systematically investigated under a Cl₂/O₂ plasma environment. Transmission electron microscopy analysis revealed that at the initial stage, Cl^- formed a protective layer on the surface of the YOF coatings, effectively slowing down further etching by Cl^-. Among the samples, the YOF 6% coating exhibited the best etching resistance, which is primarily attributed to its higher capacity for Cl^- adsorption. Overall, YOF coatings demonstrated excellent resistance in chlorine-based plasma environments, with YOF 6% in particular showing great potential as an ideal protective material for etching chamber components.