Ultrathin Bi<sub>2</sub>O<sub><b>2</b></sub>Se/Si Heterojunction Photodetector with Tunneling Oxide Passivation for Enhanced Optoelectronic Performance

Two-dimensional (2D) materials have garnered significant attention for next-generation optoelectronic devices due to their exceptional physical properties. This study introduces a high-performance ultrathin Bi<sub>2</sub>O<sub>2</sub>Se/Si heterojunction photodetector with tunneling oxide passivation, fabricated using a transfer-free pulsed laser deposition method. The Bi<sub>2</sub>O<sub>2</sub>Se layer exhibits strong air stability and compatibility for practical applications. By incorporating a thin SiO<sub>2</sub> tunneling layer, the heterostructure achieves a low dark current (∼22.3 nA/cm<sup>2</sup>), a high on/off ratio (∼8 × 10<sup>6</sup>), and a responsivity of 23.0 A/W. Compared to traditional CdS/Si devices, this photodetector demonstrates superior performance, including faster response time and higher stability. These findings underscore the potential of Bi<sub>2</sub>O<sub>2</sub>Se/Si heterostructures for advanced photonic and optoelectronic applications.

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Publication Details

Journal
ACS Applied Materials & Interfaces
Published
2025-04-23
DOI
https://doi.org/10.1021/acsami.5c03477
Citations
5
Primary Topic
2D Materials and Applications
Type
article
Field-Weighted Citation Impact
2.59

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article

Ultrathin Bi2O2Se/Si Heterojunction Photodetector with Tunneling Oxide Passivation for Enhanced Optoelectronic Performance

Wei-Han Chen, Yu‐Lun Chueh, Chao‐Hui Yeh, Ying‐Hao Chu et al.
5 citations
ACS Applied Materials & Interfaces
2D Materials and Applications
2.59
article

Ultrathin Bi2O2Se/Si Heterojunction Photodetector with Tunneling Oxide Passivation for Enhanced Optoelectronic Performance

Wei-Han Chen, Yu‐Lun Chueh, Chao‐Hui Yeh, Ying‐Hao Chu, Yu-Hao Tu, Tung-Hsuan Hung, Cheng–Ying Chen, Zhi-Hao Huang, Yi-Jyun Chen, Chien‐Wei Chen, Yao-Wun Jhang
article en
5 citations

Abstract

Two-dimensional (2D) materials have garnered significant attention for next-generation optoelectronic devices due to their exceptional physical properties. This study introduces a high-performance ultrathin Bi<sub>2</sub>O<sub>2</sub>Se/Si heterojunction photodetector with tunneling oxide passivation, fabricated using a transfer-free pulsed laser deposition method. The Bi<sub>2</sub>O<sub>2</sub>Se layer exhibits strong air stability and compatibility for practical applications. By incorporating a thin SiO<sub>2</sub> tunneling layer, the heterostructure achieves a low dark current (∼22.3 nA/cm<sup>2</sup>), a high on/off ratio (∼8 × 10<sup>6</sup>), and a responsivity of 23.0 A/W. Compared to traditional CdS/Si devices, this photodetector demonstrates superior performance, including faster response time and higher stability. These findings underscore the potential of Bi<sub>2</sub>O<sub>2</sub>Se/Si heterostructures for advanced photonic and optoelectronic applications.

ACS Applied Materials & InterfacesVol. 17(18)
National Sun Yat-sen University (TW), National Taiwan Ocean University (TW), Chang Gung University (TW), National Tsing Hua University (TW), National Institutes of Applied Research (TW)
National Science and Technology Council
Affordable and clean energy
Openalex Percentile: Top 11%
2D Materials and Applications
2.59
DOIOpen Access PDFOpenAlex
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