A Terahertz On-Chip Lowpass Filter Based on Spoof Surface Plasmon Polaritons

A new silicon germanium (SiGe)-based D-band lowpass filter (LPF) is proposed utilizing on-chip spoof surface plasmon polaritons (SSPPs). By analyzing the unique dispersion characteristics, the cutoff frequency of this on-chip SSPP-based LPF can be easily controlled by adjusting the width of the SSPP unit cell. Then, it can be further fine-tuned by modifying the length of the stub slot in the unit cell. For demonstration, an example of the proposed LPF is fabricated and experimentally tested, whose simulated and measured results are in good agreement. The measured cutoff frequency of the fabricated LPF prototype is 160 GHz. Due to its strong field confinement and flexibly tunable characteristics, the proposed on-chip SSPP structure is attractive for the applications in terahertz plasmonic devices and circuits.

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Publication Details

Journal
IEEE Electron Device Letters
Published
2025-04-22
DOI
https://doi.org/10.1109/led.2025.3563208
Citations
2
Primary Topic
Photonic and Optical Devices
Type
article
Field-Weighted Citation Impact
1.46

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article

A Terahertz On-Chip Lowpass Filter Based on Spoof Surface Plasmon Polaritons

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Photonic and Optical Devices
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article

A Terahertz On-Chip Lowpass Filter Based on Spoof Surface Plasmon Polaritons

Ying-Jiang Guo, Pin Wen, Yiqun Liu, Kai‐Da Xu, Dongxu Wang
article en
2 citations

Abstract

A new silicon germanium (SiGe)-based D-band lowpass filter (LPF) is proposed utilizing on-chip spoof surface plasmon polaritons (SSPPs). By analyzing the unique dispersion characteristics, the cutoff frequency of this on-chip SSPP-based LPF can be easily controlled by adjusting the width of the SSPP unit cell. Then, it can be further fine-tuned by modifying the length of the stub slot in the unit cell. For demonstration, an example of the proposed LPF is fabricated and experimentally tested, whose simulated and measured results are in good agreement. The measured cutoff frequency of the fabricated LPF prototype is 160 GHz. Due to its strong field confinement and flexibly tunable characteristics, the proposed on-chip SSPP structure is attractive for the applications in terahertz plasmonic devices and circuits.

IEEE Electron Device LettersVol. 46(7)
Nanchang University (CN), Xi'an University of Technology (CN), Xi'an Jiaotong University (CN), South China University of Technology (CN)
National Natural Science Foundation of China, China Scholarship Council, Key Research and Development Program of Jiangxi Province
Affordable and clean energy
Openalex Percentile: Top 18%
Photonic and Optical Devices
1.46
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