Dual-Gate Hybrid Ferroelectric Transistor Combines Photo-Switchable Logic and Memory for Encrypted Optical Communication
The demand for progressive miniaturization of optoelectronic devices drives advancements in contemporary information technology, including edge computing, image recognition, and data encryption in terminal devices. The logic-in-memory architecture enables monolithic integration of memory and logic functions. In this study, we suggest a dual-gate hybrid ferroelectric transistor (DG-HFT) consisting of the vertically stacked tellurium/α-In2Se3 junction and metal-insulator-semiconductor gate structure. This enables the integration of three fundamental logic functions (NAND, NOR, and NXOR) with in-situ memory capabilities within a single device. Using DG-HFT as reconfigurable phototransistor, we implemented an encrypted optical communication system, advancing next-generation multifunctional information systems.
Authors
- Yong Yan (ORCID: https://orcid.org/0000-0003-4283-5324)
- Shasha Li (ORCID: https://orcid.org/0000-0002-7383-866X)
- Xinyue Xu (ORCID: https://orcid.org/0009-0001-9349-8703)
Institutions
- University of Science and Technology of China (CN)
- Chaohu University (CN)
Publication Details
- Journal
- IEEE Electron Device Letters
- Published
- 2025-04-22
- DOI
- https://doi.org/10.1109/led.2025.3563268
- Primary Topic
- Advanced Memory and Neural Computing
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- National Natural Science Foundation of China
- Fundamental Research Funds for the Central Universities