A 2-kW High-Efficiency and Broadband GaN Linear RF Power Amplifier for Multinuclear Magnetic Resonance Imaging

Multinuclear magnetic resonance imaging (MRI) requires high-power, broadband radio frequency (RF) amplification to transmit signals efficiently and linearly. In this study, we propose an innovative 2-kW highly efficient broadband gallium nitride (GaN) linear power amplifier designed for multinuclear MRI at 5.0 T, showing its first application in multinuclear MRI. The amplifier design is optimized through a multiobjective optimization load–pull analysis, enabling optimal impedance matching across a wideband range (30–300 MHz) to achieve high power, efficiency, and gain flatness. In addition, a broadband high-power combiner with compensation inductors was developed to enhance phase and amplitude consistency while optimizing return loss, insertion loss, and isolation. Furthermore, an adaptive frequency-based pre-compensation linearization technique was implemented to improve amplitude linearity. Experimental validations were performed for <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">1</sup>H and <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup>H spectroscopy and imaging at 5.0T MRI. The amplifier achieves 2-kW output power across 30–300 MHz with efficiencies of 68.1% (<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">1</sup>H), 70.3% (<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup>H), 63.7% (<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">23</sup>Na), and 64.8% (<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">31</sup>P). Furthermore, gain variation and phase changes remain within ±0.9 dB and 10° over a 40-dB dynamic range. The proposed GaN amplifier offers broadband amplification and high efficiency, making it a suitable candidate for multinuclear MRI.

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Publication Details

Journal
IEEE Transactions on Microwave Theory and Techniques
Published
2025-04-22
DOI
https://doi.org/10.1109/tmtt.2025.3557471
Citations
3
Primary Topic
GaN-based semiconductor devices and materials
Type
article
Field-Weighted Citation Impact
3.77

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article

A 2-kW High-Efficiency and Broadband GaN Linear RF Power Amplifier for Multinuclear Magnetic Resonance Imaging

Chao Zou, Liwen Wan, Hairong Zheng, Shang Gao et al.
3 citations
IEEE Transactions on Microwave Theory and Techniques
GaN-based semiconductor devices and materials
3.77
article

A 2-kW High-Efficiency and Broadband GaN Linear RF Power Amplifier for Multinuclear Magnetic Resonance Imaging

Chao Zou, Liwen Wan, Hairong Zheng, Shang Gao, Shahzeb Hayat, Jiasheng Wang, Xinwei Rong, Ye Li, Xiaoliang Zhang, Xin Liu, Xing Yang, Lixian Zou
article en
3 citations

Abstract

Multinuclear magnetic resonance imaging (MRI) requires high-power, broadband radio frequency (RF) amplification to transmit signals efficiently and linearly. In this study, we propose an innovative 2-kW highly efficient broadband gallium nitride (GaN) linear power amplifier designed for multinuclear MRI at 5.0 T, showing its first application in multinuclear MRI. The amplifier design is optimized through a multiobjective optimization load–pull analysis, enabling optimal impedance matching across a wideband range (30–300 MHz) to achieve high power, efficiency, and gain flatness. In addition, a broadband high-power combiner with compensation inductors was developed to enhance phase and amplitude consistency while optimizing return loss, insertion loss, and isolation. Furthermore, an adaptive frequency-based pre-compensation linearization technique was implemented to improve amplitude linearity. Experimental validations were performed for <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">1</sup>H and <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup>H spectroscopy and imaging at 5.0T MRI. The amplifier achieves 2-kW output power across 30–300 MHz with efficiencies of 68.1% (<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">1</sup>H), 70.3% (<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup>H), 63.7% (<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">23</sup>Na), and 64.8% (<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">31</sup>P). Furthermore, gain variation and phase changes remain within ±0.9 dB and 10° over a 40-dB dynamic range. The proposed GaN amplifier offers broadband amplification and high efficiency, making it a suitable candidate for multinuclear MRI.

IEEE Transactions on Microwave Theory and TechniquesVol. 73(9)
Shenzhen Institutes of Advanced Technology (CN), University at Buffalo, State University of New York (US)
National Natural Science Foundation of China, Basic and Applied Basic Research Foundation of Guangdong Province
Affordable and clean energy
Openalex Percentile: Top 8%
GaN-based semiconductor devices and materials
3.77
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