Logic patterning and roughness improvement applications with directional ion beam etch

Next logic nodes will require metal layers to reach T2T (tip to tip) of ~15nm (or lower) with good EPE (Edge Placement Error) and low LCDU (Local CD Uniformity), but patterning of these aggressive T2T dimensions is challenging to achieve with 0.33NA single exposure. In this work, we present a solution that targets tight T2T dimensions by combining single EUV exposure with Lam’s directional IBE (Ion Beam Etch) as a use case for single patterning. Additionally, as we push the boundaries of dry resist patterning on pitch 24nm dense line-space with single 0.33 NA EUV exposure, we also demonstrate roughness improvements at a competitive low dosi for this 1-D application with IBE.