Vapor-phase metal infiltration for inorganic-organic hybrid extreme ultraviolet lithography resists

To sustain semiconductor miniaturization as predicted by Moore's law, Extreme Ultraviolet (EUV) lithography has emerged as a critical technology. EUV's shorter wavelength of 13.5nm allows for more efficient patterning of extremely scaled features necessary for advanced node semiconductor manufacturing, compared to traditional 193nm sources. However, maximizing EUV's potential requires photoresists with high EUV sensitivity, such as inorganic-organic hybrid resists. These resists, incorporating elements like Hf, In, and Sn, offer high absorbance, mechanical strength, and etch resistance. This study investigated vapor-phase infiltration of organometallic precursors only, into PMMA without co-reactants. The goal was to optimize the infiltration protocol towards improved patterning characteristics. This was done by analyzing and correlating the physical, chemical, optical, and electron beam lithography characteristics of the films. The aim is to evaluate the feasibility of the organometal-only-infiltrated hybrid photoresist towards advanced lithography, including EUV lithography.