Development of a negative-tone EUV photoresist system

This study focuses on the development of organic non-chemically amplified resist (non-CAR) materials aimed at overcoming the current Resolution & Line-edge-roughness & Sensitivity (RLS) trade-off in semiconductor manufacturing. Despite advancements, further material research and formulation optimization are required for these molecular-based photoresists. Key areas of investigation include the core structure and reactive moiety of matrix crosslinkers, as well as the EUV absorption functionality of both crosslinkers and regulators. Our findings indicate that: 1) the reactive structures within the matrix significantly influence roughness and dose to size (DtS) improvement. 2) the optimal number of EUV absorption moieties in matrix crosslinkers is crucial for achieving well-crosslinked films with reduced defectivity. These advancements contribute to improved photoresist performance, resulting in enhanced resolution in line/space patterning and faster DtS with superior roughness in pillar and contact hole patterning.