Study of a positive tone organometal chemically amplified resist for high-NA EUV patterning

A development of a novel platform for high resolution patterning using metal becomes actively in many research institute. Currently, some of the new resist platform have been investigated and metal oxide resist and dry film resist were particularly achieved good patterning performance and etching durability as negative type resist. On the contrary, performances of metal containing positive type resist have not been sufficient to compare with the negative type resists. Sensitivity of non-CAR resists have a limitation by lack of the reaction probability because of only one reaction per photon at maximum. Therefore, including high concentration of EUV absorbing metal component, using chemically amplified reaction or other sensitivity enhancement techniques are necessary to meet the sensitivity requirement for high NA EUV resist. Recently, we were obtained a material having good dissolution contrast for butyl acetate and also obtain a good patterning result by EB tool. In this conference, we will share some of the progress to improve sensitivity and resolution of positive tone organometal resist and printability result of EUV lithography.