Using a FEM-based Maxwell solver and CD-RSoXS measurement for the analysis of photoresist pattern
Understanding the interfacial structure and morphology of nanostructures is crucial for advancing photolithography. In this study, we combine a Finite Element Method (FEM)-based Maxwell solver with Resonant Soft X-ray Scattering (RSoXS) measurements to analyze the structural variations in nanograting. The FEM-based Maxwell solver is employed to simulate the scattering intensities and electromagnetic field distributions, providing detailed insight into the interaction of soft x-rays with complex patterns. Concurrently, RSoXS measurements offer a high-resolution experimental technique to probe the material composition and structure at the nanoscale. By integrating simulation and experimental data, we achieve a comprehensive understanding of the dynamics and structural changes in nanostructures, paving the way for the optimization of patterning techniques. This approach demonstrates a powerful methodology for the analysis of nanostructured materials, enhancing our ability to design and control advanced materials for next-generation lithographic applications.
Authors
- Patrick Naulleau
- Weilun Chao (ORCID: https://orcid.org/0000-0002-9752-370X)
- Anna Andrle (ORCID: https://orcid.org/0000-0001-6459-5208)
- Ricardo Ruiz (ORCID: https://orcid.org/0000-0002-1698-4281)
- Dinesh Kumar (ORCID: https://orcid.org/0000-0003-4693-0097)
- Emma Vargo (ORCID: https://orcid.org/0000-0003-2624-8381)
- Bruno La Fontaine (ORCID: https://orcid.org/0000-0002-9193-5009)
- Ryan Miyakawa
- Alexander Hexemer (ORCID: https://orcid.org/0000-0002-5269-0125)
- Warren Holcomb
- Qi Zhang (ORCID: https://orcid.org/0000-0002-3883-1729)
- Cheng Wang (ORCID: https://orcid.org/0000-0001-6075-796X)
- Zhengxing Peng (ORCID: https://orcid.org/0000-0002-7871-1158)
- Harlan Heilman
- Thomas Ferron
Publication Details
- Published
- 2025-04-22
- DOI
- https://doi.org/10.1117/12.3051461
- Primary Topic
- Advancements in Photolithography Techniques
- Type
- article
- Field-Weighted Citation Impact
- 0.00