Chemical stochastic variability in compact stochastic e-beam mask writing and EUV models

Chemical stochastics effects cover the stochastic variability occurring in the resist film immediately following the absorption of the incident exposure species, i.e. electrons in the case of e-beam mask writing or EUV photons in EUVL. Generalization of earlier developed compact stochastic models to cover this chemical variability are presented. The stochastic model accounting for the proper resist molecular roughness, not scaling with a contrast of the image or the exposure dose, is discussed. The simulation examples are presented to illustrate applications of some of the proposed models to the problem of identifying e-beam mask writing “hot spots” of increased stochastic variability.