Addressing the PFAS challenge in lithography: a holistic approach

This study focuses on developing fluorine-free alternatives, specifically targeting Photoacid Generators (PAGs) and Top Anti-Reflective Coatings (TARCs) used in lithography. The new PFAS-free PAGs meet stringent requirements for transparency, acidity strength, and diffusivity, demonstrating versatility across various polymer systems. For TARCs, the developed solutions achieve low refractive indices and excellent barrier properties in a water-based formulation, enhancing defectivity reduction and pattern profile uniformity. These innovations seek to create a complete fluorine-free solution for 248nm lithography, addressing significant challenges in semiconductor material replacement.

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Publication Details

Published
2025-04-22
DOI
https://doi.org/10.1117/12.3051383
Citations
1
Primary Topic
Advancements in Photolithography Techniques
Type
article
Field-Weighted Citation Impact
0.73
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article

Addressing the PFAS challenge in lithography: a holistic approach

Walter Weihong Liu, Ionela‐Daniela Carja, Fumio Kita, Ryo Kawahara et al.
1 citations
Advancements in Photolithography Techniques
0.73
article

Addressing the PFAS challenge in lithography: a holistic approach

Walter Weihong Liu, Ionela‐Daniela Carja, Fumio Kita, Ryo Kawahara, Hung-Yang Chen, Ralph R. Dammel, Takahiro Yano, Go Noya, Mark Marcello Maturi, Suzanna Azoubel, Elizaveta Kossoy, Avia Leader, Kenta Watanabe, Megumi Takahashi, Fumiaki Takagi, Chun‐Wei Chen, K Nishikawa, Lei Lu, Shoji Kuwabara, Hiroshi Hitokawa
article en
1 citations

Abstract

This study focuses on developing fluorine-free alternatives, specifically targeting Photoacid Generators (PAGs) and Top Anti-Reflective Coatings (TARCs) used in lithography. The new PFAS-free PAGs meet stringent requirements for transparency, acidity strength, and diffusivity, demonstrating versatility across various polymer systems. For TARCs, the developed solutions achieve low refractive indices and excellent barrier properties in a water-based formulation, enhancing defectivity reduction and pattern profile uniformity. These innovations seek to create a complete fluorine-free solution for 248nm lithography, addressing significant challenges in semiconductor material replacement.

Merck KGaA, Darmstadt (Germany) (DE), Merck Biopharma Co., Ltd. (Japan) (JP)
Quality Education
Openalex Percentile: Top 29%
Advancements in Photolithography Techniques
0.73
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Addressing the PFAS challenge in lithography: a holistic approach — Walter Weihong Liu, Ionela‐Daniela Carja, et al. · (2025) | TGRS Research Map | TGRS