Lithographic properties of a novel metalloid-based resist

Here we describe a novel, non-chemically amplified positive tone resist system that has high absorbance of EUV. The resist is metalloid-based. The material is photosensitive at I line, 254nm, ebeam, EUV and possibly other wavelengths. Resist development was done mostly by means of contrast curves using ebeam exposures. The intrinsic contrast of the system depends on the solvent system used for development. The best solvent found was a combination of methanol and water. With this development system contrasts in the range of 1.1 to 1.6 were found, depending on the polymer substituents. This material was exposed using EUV interference lithography and showed resolution of 20nm lines and spaces with reasonable LWR at a dose of 27mJ/cm² in a resist thickness of fifteen to twenty nanometers.