Evaluation of a non-PFAS and non-fluorine KrF resist used in semi-conductor manufacturing

Due to increasing regulations on per- and Polyfluoroalkyl Substances (PFAS), the semiconductor industry is exploring alternative chemistries. PFAS materials are commonly used in lithographic products, especially in chemically amplified resists as Photo-Acid Generators (PAGs). Last year, first papers have reported promising results for lithographic resists without fluorine, suitable for various lithography technologies like I-Line, KrF, ArF, and EUV. This study aims to compare mass production 248nm chemically amplified photoresist UVTM 26G with its non-fluorine counterpart UVTM 26GNF. Key comparisons include, sensitivity, dose and focus latitudes to support not only the proof of concept but also the high potential for industrial use of this non-fluorine chemically amplified resist formulation in the near future.