New development technology for EUV tight pitch patterning

EUV lithography using Metal Oxide Resist (MOR) have been applying for high Numerical Aperture (NA) EUV lithography to accelerate miniaturization. However, a pattern collapse of resist pattern in tight pitch patterning limits the ability to miniaturize using conventional development. In this paper, to break this limits, new development techniques called “novel develop” were challenged. The novel development improved stochastic defects including pattern collapse, bridge defects and pinching defects in current and advance node patterning. Additionally, dose to size (DtS) and roughness were at least equivalent to or better than conventional development method indicates the potential of the novel develop as useful for nodes considering high NA generations.