Tunable Cavity Coupling to Spin Defects in a 4H-Silicon-Carbide-On-Insulator Platform

Silicon carbide (SiC) has attracted significant attention as a promising quantum material due to its ability to host long-lived, optically addressable color centers with solid-state photonic interfaces. The CMOS compatibility of 4H-SiCOI (silicon-carbide-on-insulator) makes it an ideal platform for integrated quantum photonic devices and circuits. While microring cavities have been extensively studied in SiC and other materials, the integration of 4H-SiC spin defects into these critical structures, along with continuous mode tunability, remains unexplored. In this work, we demonstrate the integration of PL4 divacancy spin defects into tunable microring cavities in scalable thin-film 4H-SiC nanophotonics. Comparing on- and off-resonance conditions, we observed an enhancement of the Purcell factor by approximately 5.0. This enhancement effectively confined coherent photons within the coupled waveguide, leading to a 2-fold increase in the ODMR (optically detected magnetic resonance) contrast and coherent control of PL4 spins. These advancements lay the foundation for developing SiC-based quantum photonic circuits.

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Publication Details

Journal
ACS Photonics
Published
2025-04-22
DOI
https://doi.org/10.1021/acsphotonics.4c02574
Citations
5
Primary Topic
Semiconductor materials and devices
Type
article
Field-Weighted Citation Impact
3.65

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article

Tunable Cavity Coupling to Spin Defects in a 4H-Silicon-Carbide-On-Insulator Platform

Zhengtong Liu, Haibo Hu, Qinghai Song, Shumin Xiao et al.
5 citations
ACS Photonics
Semiconductor materials and devices
3.65
article

Tunable Cavity Coupling to Spin Defects in a 4H-Silicon-Carbide-On-Insulator Platform

Zhengtong Liu, Haibo Hu, Qinghai Song, Shumin Xiao, Shen Lai, Xin Ou, Yu Zhou, Ailun Yi, Bo Liang, Yao Zhang, Qi Luo, Tongyuan Bao
article en
5 citations

Abstract

Silicon carbide (SiC) has attracted significant attention as a promising quantum material due to its ability to host long-lived, optically addressable color centers with solid-state photonic interfaces. The CMOS compatibility of 4H-SiCOI (silicon-carbide-on-insulator) makes it an ideal platform for integrated quantum photonic devices and circuits. While microring cavities have been extensively studied in SiC and other materials, the integration of 4H-SiC spin defects into these critical structures, along with continuous mode tunability, remains unexplored. In this work, we demonstrate the integration of PL4 divacancy spin defects into tunable microring cavities in scalable thin-film 4H-SiC nanophotonics. Comparing on- and off-resonance conditions, we observed an enhancement of the Purcell factor by approximately 5.0. This enhancement effectively confined coherent photons within the coupled waveguide, leading to a 2-fold increase in the ODMR (optically detected magnetic resonance) contrast and coherent control of PL4 spins. These advancements lay the foundation for developing SiC-based quantum photonic circuits.

ACS PhotonicsVol. 12(6)
University of Macau (MO), Harbin Institute of Technology (CN), Photonic Systems (United States) (US), Peng Cheng Laboratory (CN), Shanxi University of Traditional Chinese Medicine (CN), Shanghai Institute of Microsystem and Information Technology (CN), University of Chinese Academy of Sciences (CN), Ministry of Industry and Information Technology (CN)
China Association for Science and Technology, National Natural Science Foundation of China, Chinese Academy of Sciences, Shenzhen Fundamental Research Program, National Key Research and Development Program of China, Scientific and Innovative Action Plan of Shanghai, Basic and Applied Basic Research Foundation of Guangdong Province
Affordable and clean energy
Openalex Percentile: Top 7%
Semiconductor materials and devices
3.65
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