High-efficiency phase transition of 2H-molybdenum ditelluride films on diverse substrates

The synthesis of p-type two-dimensional (2D) semiconductor 2H-MoTe2 films on various dielectric substrates is essential for realizing multilayer architectures for electronic and optoelectronic devices. However, achieving high-efficiency and complete 2H phase fabrication on diverse substrates is challenging. In this study, a multipoint nucleation approach was proposed for achieving controlled phase transitions of MoTe2 films via space confinement in the CVD growth process. This interstitial environment limited Te evaporation and considerably enhanced the reactant collision probability, leading to a high nucleation density of 2H-MoTe2 films. Using the proposed approach, large-area 2H-MoTe2 films were fabricated in ∼30 min. This high-efficiency phase-transition approach has promising implications for the industrial fabrication of large-scale 2D semiconductor films and other potential applications in electronic and optoelectronic devices.

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Publication Details

Journal
Applied Physics Letters
Published
2025-04-21
DOI
https://doi.org/10.1063/5.0262619
Citations
2
Primary Topic
Optical properties and cooling technologies in crystalline materials
Type
article
Field-Weighted Citation Impact
2.49

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article

High-efficiency phase transition of 2H-molybdenum ditelluride films on diverse substrates

Udo Schwingenschlögl, Bo Tian, Junzhu Li, Xiufang Ou et al.
2 citations
Applied Physics Letters
Optical properties and cooling technologies in crystalline materials
2.49
article

High-efficiency phase transition of 2H-molybdenum ditelluride films on diverse substrates

Udo Schwingenschlögl, Bo Tian, Junzhu Li, Xiufang Ou, Yuxuan Huang, Meng Tang, Aitian Chen, Xixiang Zhang, Yating Wan, Chen Liu, Hang Liu, Xiaowen Zhang, Maolin Chen, Ning Zhao, Dongxing Zheng
article en
2 citations

Abstract

The synthesis of p-type two-dimensional (2D) semiconductor 2H-MoTe2 films on various dielectric substrates is essential for realizing multilayer architectures for electronic and optoelectronic devices. However, achieving high-efficiency and complete 2H phase fabrication on diverse substrates is challenging. In this study, a multipoint nucleation approach was proposed for achieving controlled phase transitions of MoTe2 films via space confinement in the CVD growth process. This interstitial environment limited Te evaporation and considerably enhanced the reactant collision probability, leading to a high nucleation density of 2H-MoTe2 films. Using the proposed approach, large-area 2H-MoTe2 films were fabricated in ∼30 min. This high-efficiency phase-transition approach has promising implications for the industrial fabrication of large-scale 2D semiconductor films and other potential applications in electronic and optoelectronic devices.

Applied Physics LettersVol. 126(16)
King Abdullah University of Science and Technology (SA)
King Abdullah University of Science and Technology
Openalex Percentile: Top 12%
Optical properties and cooling technologies in crystalline materials
2.49
DOIOpen Access PDFOpenAlex
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