The influence on optoelectronic characteristics of MOS capacitor solid-state incandescent with AZO, GZO and ITO top electrodes

Transparent electrodes, as a key component of light-emitting devices, significantly influence their optoelectronic performance. This study investigates the impact of AZO, GZO, and ITO transparent top electrodes on the optoelectronic characteristics of MOS capacitor solid-state incandescent light-emitting devices. The results illustrate that the ITO top electrode sample exhibit significant decrease in optoelectronic characteristics after 2 h continuous emission, while AZO and GZO electrodes maintain superior stability. For AZO and GZO top electrodes samples, the emitting intensity decrease by 6.6 % and 12.7 %, respectively, and current density decrease by 6.3 % and 10 %. In contrast, the ITO top electrode sample suffer a 49.6 % reduction in emitting intensity and a 45 % drop in current density. Microscopic analysis prove that the structural degradation of ITO under high emitting temperature cause its performance degradation, whereas AZO and GZO electrodes maintain stable structural integrity. This work illustrates the enhanced thermal stability and emitting durability of AZO and GZO electrodes compared to conventional ITO in high-temperature environments.