Topology optimization empowered dual-band second-order photonic topological insulators

Dual-band second-order photonic topological insulators (SPTIs), characterized by multiple corner states, offer exceptional potential for robust multiband manipulation of electromagnetic waves in lower dimensions. However, previous theoretical implementations of dual-band SPTIs have been constrained by limited flexibility, hindering their adaptability for diverse applications. Additionally, experimental validation of these dual-band SPTIs has been lacking. In this study, we introduce a topology optimization method to design SPTIs with customizable dual-band corner states tailored for specific multiband applications. Dual-band SPTIs with customized corner states for manipulating electromagnetic waves of transverse magnetic and electric modes are created. Furthermore, multiple corner states within dual bandgaps are experimentally confirmed. This work opens new avenues for creating customizable photonic devices with dual-band topological features, enabling versatile multiband applications.

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Publication Details

Journal
Physical Review Applied
Published
2025-04-22
DOI
https://doi.org/10.1103/physrevapplied.23.044048
Citations
2
Primary Topic
Topological Materials and Phenomena
Type
article
Field-Weighted Citation Impact
2.49

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article

Topology optimization empowered dual-band second-order photonic topological insulators

Yafeng Chen, Jie Zhu, Shanjun Liang, Yuting Yang et al.
2 citations
Physical Review Applied
Topological Materials and Phenomena
2.49
article

Topology optimization empowered dual-band second-order photonic topological insulators

Yafeng Chen, Jie Zhu, Shanjun Liang, Yuting Yang, Zhihao Lan, Shiyu Liu, Zhongqing Su
article en
2 citations

Abstract

Dual-band second-order photonic topological insulators (SPTIs), characterized by multiple corner states, offer exceptional potential for robust multiband manipulation of electromagnetic waves in lower dimensions. However, previous theoretical implementations of dual-band SPTIs have been constrained by limited flexibility, hindering their adaptability for diverse applications. Additionally, experimental validation of these dual-band SPTIs has been lacking. In this study, we introduce a topology optimization method to design SPTIs with customizable dual-band corner states tailored for specific multiband applications. Dual-band SPTIs with customized corner states for manipulating electromagnetic waves of transverse magnetic and electric modes are created. Furthermore, multiple corner states within dual bandgaps are experimentally confirmed. This work opens new avenues for creating customizable photonic devices with dual-band topological features, enabling versatile multiband applications.

Physical Review AppliedVol. 23(4)
Tongji University (CN), Hong Kong Polytechnic University (HK), China University of Mining and Technology (CN), MWT Materials (United States) (US), State Key Laboratory of Millimeter Waves, University College London (GB)
National Natural Science Foundation of China, Innovation and Technology Commission, State Key Laboratory of Millimeter Waves
Openalex Percentile: Top 12%
Topological Materials and Phenomena
2.49
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