Studies on resistive switching mechanisms in RRAM memory structures based on copper (II) oxide

• The memristor phenomenon was observed in MIM structures based on CuO films. • Resistive switching occurs due to the formation and rupture of conductive paths within the active layer. • SCLC is the dominant carrier transport mechanism in the structures studied. Hydrothermally grown copper (II) oxide (CuO) films exhibit the memristive phenomenon, which makes them a promising candidate for application in resistive random-access memories (RRAM). Understanding the basic physical phenomena responsible for resistive switching holds significant promise for advancing this technology. This work presents research findings on the switching and charge carrier transport mechanisms in RRAM structures based on CuO films. These mechanisms were identified using conductive AFM and by analyzing current–voltage characteristics. Obtained results revealed the presence of trap-limited and trap-filled space charge limited current mechanisms in the broad examined voltage range.