Power Losses Analysis in Multiport Active Bridge Using Wideband Semiconductors

In modern power electronics much attention is attracted to isolated multiport active bridge converters because of their unique features such as galvanic isolation and effective power flow control between ports. However, this topology faces some issues regarding power losses, which is why their analysis is one of the prospect research directions for efficiency increase. This paper analyzes the influence of different types of power (GaN, SiC and Si) transistors on the performance of triple active bridge converter. The converter's performance is studied with SPICE-defined models of its components. The results of the comparison show the benefits of different semiconductor technologies at different switching frequencies. In addition, it provides the recommendation for switch selection in a real-life case study.