Technology enablement of area scaling by EUV patterning and etch processes in advanced node technology

The demand for continuous area scaling in advanced node logic devices has led to the emergence of innovative patterning technologies such as Extreme Ultraviolet (EUV) patterning and novel multi-patterning methods. In this work, we will present several key technology enablement to overcome the fundamental challenges in the EUV single and multi-patterning areas. These innovations include: 1) Patterning of CAR (chemically amplified resist) and MOR (metalorganic resist) in a tight pitch feature; 2) Extension of EUV multi-patterning; 3) Pattern variations control in EUV patterning and etch to ensure the pattern fidelity. Continuous innovation and overcoming the challenges associated with these processes are essential for the scaling progress in shrinking feature sizes and enabling the development of next-generation electronic devices.