InGaP/InGaAs/Ge multi-junction solar cells efficiency improvements using interposed transport layers

The high conversion efficiency of solar cells can make them more competitive in cost compared to conventional energy sources. Therefore, enhancing photovoltaic cell efficiency remains a critical challenge for researchers and manufacturers. Shockley-Queisser single junction photovoltaic cells are limited to 33.7%, and multi-junction solar cells are the most promising technologies that have achieved remarkable efficiencies exceeding 46%. Modeling and simulation are essential to optimize semiconductor devices and reduce their development time and cost. This study investigates the performance improvement of novel InGaP/InGaAs/Ge triple-junction solar cells by integrating III-V semiconductors. The design includes Tungsten disulfide as an electron transport layer, reduced graphene oxide as a hole transport layer, and intrinsic InGaAs layers to improve efficiency in decreasing the number of InGaP, InGaAs, and Ge layers to reduce manufacturing costs. SCAPS 1D software was used to simulate under a solar irradiance of 1000 Wm-2 and an air mass of AM1.5G spectrum at 25°C. In addition, a commercial InGaP/InGaAs/Ge solar cell and a mini-solar panel were also simulated, and the obtained current-voltage characteristics were compared with experimental data. A strong correlation was observed between the simulated data and the experimental measurements, confirming the proposed solar cell design's potential, accuracy, and reliability. The new structure produced an impressive power conversion efficiency of 49.83%. The findings suggest a route to manufacturing new multi-junction photovoltaic cells with high efficiency and lower cost.