Effect of ion angle on pattern shaping performance
Pattern shaping demonstrates critical tip-to-tip dimensions beyond the capabilities achieved by EUV lithography. As feature size shrinks, stochastic noise poses challenges that demand innovative solutions. In this paper, high angle pattern shaping is introduced to enable directly printed tip-to-tip CD down to the sub-15 nm. This new process also has shown refinement in line width roughness, specifically more than 0.8 nm line width roughness improvement has been recorded at tighter pitches. This accelerates the achievement of the technology readiness milestones.
Authors
- Liwei An
- Tristan A. Tronic (ORCID: https://orcid.org/0000-0003-3285-6607)
- Kevin Anglin
- Sarah Thomas (ORCID: https://orcid.org/0000-0002-0053-0154)
- Can Güven (ORCID: https://orcid.org/0000-0001-6558-1780)
- R. Browning (ORCID: https://orcid.org/0000-0002-1404-0789)
- Norman Chen
- Nadjoua Moumen
- Charles H. Wallace
- S. Sherman
- Hui‐Xiong Dai (ORCID: https://orcid.org/0000-0002-2937-6146)
- Peng Sun (ORCID: https://orcid.org/0000-0001-5681-6621)
- C. C. Hsu
- Shurong Liang
- Yung‐Chen Lin
- Chenyu Hou (ORCID: https://orcid.org/0009-0006-2694-5848)
- Tricia Tighe
Publication Details
- Published
- 2025-04-22
- DOI
- https://doi.org/10.1117/12.3056941
- Primary Topic
- Ion-surface interactions and analysis
- Type
- article
- Field-Weighted Citation Impact
- 0.00