Pattern-shaping technology enables improvements of logic layouts patterning beyond 15nm tip-to-tip

The Pattern-Shaping Technology capability brings improvement in terms of LWR/LER, LCDU and mitigates stochastic bridge defects through controlled elongation and shape manipulation of EUV pattern features. In this paper, two EUV patterning use cases are investigated to enable T2T CD down to 15nm: (1) a MoL Trench Contact layer at pitch ranging from 40 to 48nm using Chemically Amplified Resist (CAR) with dark field mask, (2) a BEOL Metal layer at pitch 28nm using Metal Oxide Resist (MOR) with bright field mask. The performance of the Pattern-Shaping technology is being evaluated on different metal layer designs. The evaluation was performed in three aspects. (1) achieving a >15nm T2T size shrink. (2) improving the line-width-roughness (LWR) of lines. (3) mitigating the post-litho patterning defectivity.