ASD from lithography replacement to lithography enhancement

This presentation will show that although the original idea of Area Selective Deposition (ASD) process was to replace lithography steps, there is a growing interest in using ASD to improve lithography and plasma etching performances.

Authors

Institutions

Publication Details

Published
2025-04-22
DOI
https://doi.org/10.1117/12.3056724
Primary Topic
3D IC and TSV technologies
Type
article
Field-Weighted Citation Impact
0.00
Controls
|||
ALL TIME
JAN
FEB
MAR
APR
MAY
JUN
JUL
AUG
SEP
OCT
article

ASD from lithography replacement to lithography enhancement

Rhonda Robert, C. Vallée, Nguyen Van Long, Carl A. Ventrice et al.
3D IC and TSV technologies
article

ASD from lithography replacement to lithography enhancement

Rhonda Robert, C. Vallée, Nguyen Van Long, Carl A. Ventrice, Gregory H. Denbeaux, Nicolas Pinos Maldonado, Anthony Valenti, shivan Antar, Ciaran C. Mackenzie
article en

Abstract

This presentation will show that although the original idea of Area Selective Deposition (ASD) process was to replace lithography steps, there is a growing interest in using ASD to improve lithography and plasma etching performances.

University at Albany, State University of New York (US)
Openalex Percentile: Top 94%
3D IC and TSV technologies
AI Navigator

Ask Laika to Summarize, Analyze, and Connect papers live on the map.

Summarize Papers & Methodologies

Extract key findings, datasets, and comparative methods across publications.

Benchmark Rankings & Visual Analytics

Rank top research institutions, authors, funders, topics, and journals by Field-Weighted Citation Impact (FWCI) and paper volume with instant charts.

Connect Distant Disciplines

Bridge topological clusters on the map to find hidden collaborative intersections.