High-sensitivity positive-tone hybrid EUV resist synthesized by vapor phase metal-oxide infiltration

Polymeric resists can be converted into hybrids by ex-situ vapor phase infiltration synthesis of metal oxides. We have demonstrated the concept for PMMA-MOx hybrid resist compositions, however their residue free development proved challenging. We expand the approach to infiltrating metal oxide moieties into high sensitivity resist (HSR), realizing residue-free patterning in basic developer accompanied by sensitivity improvement. In this study, physicochemical characterization of this novel hybrid positive-tone resist system is elucidated and lithography performance of the HSR-MOx compositions is investigated for both EBL and EUVL patterning.