EUV optics portfolio extended: first high-NA systems delivered and showing excellent imaging results
EUV lithography has evolved into a mature workhorse technology for critical application layers of almost all of today’s high-end products and, quite naturally, has found its way into our pockets and everyday lifes. To allow maximum productivity optimization tailored to the actual process demands, ZEISS and ASML provide two EUV scanner product lines: the NA 0.33 product line with 13 nm resolution and the NA 0.55 product line with 8 nm resolution. Both product lines are continuously developed further. In this work, we show how throughput of the NA 0.33 product line has been further increased while at the same time optical performance could be improved. Switching to NA 0.55 we present in-resist images and aberration data of the very first delivered systems of this product line. For both product lines we then outline the respective performance and productivity roadmaps that are currently in development to support process requirements of future nodes. Finally, we conclude with a short glance at the progress of construction works at ZEISS to enable ramping & securing EUV optics production for the coming decade.
Authors
- Peter Kürz
- O. Conradi
- Harrie van Dijck
- Teun van Gogh
- Paul Gräupner
- S. Geyer (ORCID: https://orcid.org/0000-0003-1746-9019)
- Jan van Schoot (ORCID: https://orcid.org/0000-0001-6643-7254)
- Peter Vanoppen
- Claus Zahlten
- Roel Moors
Institutions
- Carl Zeiss (Germany) (DE)
- ASML (Netherlands) (NL)
Publication Details
- Published
- 2025-04-22
- DOI
- https://doi.org/10.1117/12.3051098
- Primary Topic
- Advanced X-ray Imaging Techniques
- Type
- article
- Field-Weighted Citation Impact
- 0.00