Advanced PnR logic patterning enabled by high-NA EUV lithography
This work presents the development of single-print metal logic patterning for A14 and A10 technology nodes using the TWINSCAN EXE:5000 at the ASML-imec High-NA lab, following successful pattern transfer via etch. The study focuses on random logic metal designs characterized by tight pitch constraints and aggressive tip-to-tip spacing, addressing the patterning challenges associated with advanced node scaling.
Authors
- Atsushi Tsuboi
- Arame Thiam (ORCID: https://orcid.org/0000-0001-9814-0420)
- Bojun Cheng (ORCID: https://orcid.org/0000-0001-5551-4242)
- Nobuyuki Fukui (ORCID: https://orcid.org/0000-0003-1044-1419)
- Chunzhi Gong (ORCID: https://orcid.org/0000-0001-7857-5486)
- Víctor M. Blanco Carballo (ORCID: https://orcid.org/0000-0003-4308-0381)
- Kaushik Sah (ORCID: https://orcid.org/0000-0002-8603-4169)
- Yannick Feurprier
- Joern-Holger Franke (ORCID: https://orcid.org/0000-0002-3571-1633)
- Kathleen Nafus
- Joost Bekaert (ORCID: https://orcid.org/0000-0003-3075-3479)
- Werner Gillijns
- Zhijin Chen (ORCID: https://orcid.org/0000-0001-5497-5418)
- Yasser Sherazi
- Balakumar Baskaran
- Syamashree Roy
- Hemant Vats
- Ardavan Niroomand
Institutions
- Tokyo Electron (Japan) (JP)
- IMEC (BE)
Publication Details
- Published
- 2025-04-22
- DOI
- https://doi.org/10.1117/12.3051054
- Citations
- 1
- Primary Topic
- Advancements in Photolithography Techniques
- Type
- article
- Field-Weighted Citation Impact
- 0.73