Progress towards adoption of high-NA EUV lithography in pilot manufacturing

EUV lithography continues to make scaling cost effective for chip manufacturers and allows Moore`s law to continue. High NA EUV with its increased numerical aperture (NA) from 0.33 NA to 0.55 NA enables 2.8x increase in feature density and improved local CDU. This brings several benefits for advanced chipmakers such as patterning cost reduction due to reduced exposure dose, reduced defect density as a result of process simplification and shorter cycle time via mask reduction. Multiple High NA EUV systems (EXE:5000) have been installed and qualified at chip manufacturers and the ASML factory. These system have demonstrated the excellent patterning and overlay capability required to support next generation chip manufacturing. Next to that, high wafer per day output, at low mask and wafer defectivity rates is required.