High-NA imaging performance, a year of learnings after first light on wafer

A year after the first photons made their way through the optical column of a high-NA system, we provide an in-depth experimental study of its key imaging features. This work highlights three main aspects of the novel 0.55NA optics and their relation to Imaging performance: the aberrations, the obscuration and the anamorphic design. This is done by in-resist experiments, which are compared to (sensor-based) lithographic simulations to provide understanding on the Imaging of the 0.55NA system.

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Published
2025-04-22
DOI
https://doi.org/10.1117/12.3051437
Primary Topic
Integrated Circuits and Semiconductor Failure Analysis
Type
article
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article

High-NA imaging performance, a year of learnings after first light on wafer

Ben Smith, Sofia Leitao, Guido Schiffelers, Jose L. Sambricio et al.
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Integrated Circuits and Semiconductor Failure Analysis
article

High-NA imaging performance, a year of learnings after first light on wafer

Ben Smith, Sofia Leitao, Guido Schiffelers, Jose L. Sambricio, Stefan N. Smith-Meerman, Hilbert van Loo, Eelco van Setten, Jan van Schoot, Po-Cheng Lin, Dennis Stoel, Tim Driessen, Amber de Bruijn, Bas van Meerten
article en

Abstract

A year after the first photons made their way through the optical column of a high-NA system, we provide an in-depth experimental study of its key imaging features. This work highlights three main aspects of the novel 0.55NA optics and their relation to Imaging performance: the aberrations, the obscuration and the anamorphic design. This is done by in-resist experiments, which are compared to (sensor-based) lithographic simulations to provide understanding on the Imaging of the 0.55NA system.

ASML (Netherlands) (NL)
Openalex Percentile: Top 94%
Integrated Circuits and Semiconductor Failure Analysis
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High-NA imaging performance, a year of learnings after first light on wafer — Ben Smith, Sofia Leitao, et al. · (2025) | TGRS Research Map | TGRS